GT50J327 Datasheet - Toshiba Semiconductor

GT50J327 silicon N-channel IGBT

www.DataSheet4U.com GT50J327 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J327 Current Resonance Inverter Switching Application Enhancement mode type High speed : tf = 0.19 µs (typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50A) FRD included between emitter and collector Fourth generation IGBT TO-3P(N) (Toshiba package name) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collecto.

GT50J327_ToshibaSemiconductor.pdf