Part number:
GT50J327
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
184.67 KB
Description:
Silicon n-channel igbt.
GT50J327_ToshibaSemiconductor.pdf
Datasheet Details
GT50J327_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT50J327
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
184.67 KB
Description:
Silicon n-channel igbt.
GT50J327, silicon N-channel IGBT
www.DataSheet4U.com GT50J327 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J327 Current Resonance Inverter Switching Application Enhancement mode type High speed : tf = 0.19 µs (typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50A) FRD included between emitter and collector Fourth generation IGBT TO-3P(N) (Toshiba package name) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collecto
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