Part number:
GT50J123
Manufacturer:
File Size:
214.44 KB
Description:
Silicon n-channel igbt.
Datasheet Details
Datasheet Details
Part number:
GT50J123
Manufacturer:
File Size:
214.44 KB
Description:
Silicon n-channel igbt.
GT50J123, Silicon N-Channel IGBT
GT50J123 Features
* (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.9 V (typ.) (IC = 50 A, Ta = 25 ) (3) High junction temperature: Tj = 175 (max) 3. Packaging and Internal Circuit GT50J123 TO-3P(N) 1: Gate 2: Collector (heatsink) 3: Emitter ©2018 Toshiba Electronic Devices & Storage Corporation 1
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