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GT50J123 Datasheet - Toshiba

GT50J123 Silicon N-Channel IGBT

GT50J123 Features

* (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.9 V (typ.) (IC = 50 A, Ta = 25 ) (3) High junction temperature: Tj = 175 (max) 3. Packaging and Internal Circuit GT50J123 TO-3P(N) 1: Gate 2: Collector (heatsink) 3: Emitter ©2018 Toshiba Electronic Devices & Storage Corporation 1

GT50J123-Toshiba.pdf

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Datasheet Details

Part number:

GT50J123

Manufacturer:

Toshiba ↗

File Size:

214.44 KB

Description:

Silicon n-channel igbt.

GT50J123 Distributor

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GT50J123 GT50J123 Silicon N-Channel IGBT Toshiba