* (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.9 V (typ.) (IC = 50 A, Ta = 25 ) (3) High junction temperature: Tj = 175 (max) 3. Packaging and Internal Circuit GT50J123 TO-3P(N) 1: Gate 2: Collector (heatsink) 3: Emitter ©2018 Toshiba Electronic Devices & Storage Corporation 1
GT50J123 Datasheet (214.44 KB)
GT50J123
214.44 KB
Silicon n-channel igbt.
Discrete IGBTs Silicon N-Channel IGBT
GT50J123
1. Applications
* Hard Switching
* High-Speed Switching
* Power Factor Correcti.
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