Datasheet Specifications
- Part number
- GT50J123
- Manufacturer
- Toshiba ↗
- File Size
- 214.44 KB
- Datasheet
- GT50J123-Toshiba.pdf
- Description
- Silicon N-Channel IGBT
Description
Discrete IGBTs Silicon N-Channel IGBT GT50J123 1.Applications * Hard Switching * High-Speed Switching * Power Factor Correcti.
Features
* (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.9 V (typ. ) (IC = 50 A, Ta = 25 ) (3) High junction temperature: Tj = 175 (max) 3. Packaging and Internal Circuit GT50J123 TO-3P(N) 1: Gate 2: Collector (heatsink) 3: Emitter ©2018 Toshiba Electronic Devices & Storage Corporation 1Applications
* Hard SwitchingGT50J123 Distributors
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