Part number:
GT50J325
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
222.46 KB
Description:
Silicon n-channel igbt.
GT50J325_ToshibaSemiconductor.pdf
Datasheet Details
GT50J325_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT50J325
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
222.46 KB
Description:
Silicon n-channel igbt.
GT50J325, Silicon N-Channel IGBT
GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications Unit: mm Fourth generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 μs (typ.) Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.) Low saturation Voltage: VCE (sat) = 2.0 V (typ.) FRD included bet
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