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GT50J325 Datasheet - Toshiba Semiconductor

GT50J325 Silicon N-Channel IGBT

GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications Unit: mm Fourth generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 μs (typ.) Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.) Low saturation Voltage: VCE (sat) = 2.0 V (typ.) FRD included bet.

GT50J325_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

GT50J325

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

222.46 KB

Description:

Silicon n-channel igbt.

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GT50J325 GT50J325 Silicon N-Channel IGBT Toshiba Semiconductor