Datasheet Specifications
- Part number
- GT50J341
- Manufacturer
- Toshiba ↗
- File Size
- 245.42 KB
- Datasheet
- GT50J341-Toshiba.pdf
- Description
- Silicon N-Channel IGBT
Description
Discrete IGBTs Silicon N-Channel IGBT GT50J341 1.Applications * Dedicated to Current-Resonant Inverter Switching Applications Note: The produ.
Features
* (1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.15 µs (typ. ) (IC = 50 A) (4) Low saturation voltage: VCE(sat) = 1.6 V (typ. ) (IC = 50 A) (5) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50J341 TO-3P(N) 1: Gate 2: Collector 3: Emitter SGT50J341 Distributors
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