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GT50J341 Datasheet - Toshiba

GT50J341 Silicon N-Channel IGBT

GT50J341 Features

* (1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.15 µs (typ.) (IC = 50 A) (4) Low saturation voltage: VCE(sat) = 1.6 V (typ.) (IC = 50 A) (5) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50J341 TO-3P(N) 1: Gate 2: Collector 3: Emitter S

GT50J341 Datasheet (245.42 KB)

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Datasheet Details

Part number:

GT50J341

Manufacturer:

Toshiba ↗

File Size:

245.42 KB

Description:

Silicon n-channel igbt.

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GT50J341 Silicon N-Channel IGBT Toshiba

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