* (1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.15 µs (typ.) (IC = 50 A) (4) Low saturation voltage: VCE(sat) = 1.6 V (typ.) (IC = 50 A) (5) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50J341 TO-3P(N) 1: Gate 2: Collector 3: Emitter S
GT50J341 Datasheet (245.42 KB)
GT50J341
245.42 KB
Silicon n-channel igbt.
Discrete IGBTs Silicon N-Channel IGBT
GT50J341
1. Applications
* Dedicated to Current-Resonant Inverter Switching Applications
Note: The produ.
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