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GT50J121 Datasheet - Toshiba Semiconductor

GT50J121 silicon N-channel IGBT

GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 µs (typ.) Low switching loss : Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.) Low saturation Voltage: VCE (sat) = 2.0 V (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Charact.

GT50J121 Datasheet (315.74 KB)

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Datasheet Details

Part number:

GT50J121

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

315.74 KB

Description:

Silicon n-channel igbt.

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GT50J121 silicon N-channel IGBT Toshiba Semiconductor

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