Part number:
GT50J121
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
315.74 KB
Description:
Silicon n-channel igbt.
GT50J121-ToshibaSemiconductor.pdf
Datasheet Details
GT50J121-ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT50J121
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
315.74 KB
Description:
Silicon n-channel igbt.
GT50J121, silicon N-channel IGBT
GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 µs (typ.) Low switching loss : Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.) Low saturation Voltage: VCE (sat) = 2.0 V (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Charact
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