Datasheet4U.com

GT50N324 - silicon N-channel IGBT

Toshiba

📥 Download Datasheet

GT50N324 Datasheet Preview — Preview of GT50N324 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	GT50N324
Manufacturer	Toshiba ↗
File Size	555.73 KB
Description	silicon N-channel IGBT
Datasheet	GT50N324-Toshiba.pdf

GT50N324 Product details

Features

(1) Sixth generation (2) Enhancement mode (3) High-speed switching: IGBT tf = 0.11 µs (typ. ) (IC = 60 A) FRD trr = 0.8 µs (typ. ) (di/dt = -20 A/µs) (4) Low saturation voltage: VCE(sat) = 1.9 V (typ. ) (IC = 60 A) (5) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50N324 TO-3P(N) 1: Gate 2: Collector 3: Emitter ©2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2008-03 2019-11-18 Rev.2.0 GT50N324 4. Absolute Maximum Ratin.

📁 GT50N324 Similar Datasheet

GT50N321 - silicon N-channel IGBT (Toshiba Semiconductor)
GT50N322A - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT50G102 - Insulated Gate Bipolar Transistor (ETC)
GT50G321 - silicon N-channel IGBT (Toshiba Semiconductor)
GT50J102 - silicon N-channel IGBT (Toshiba Semiconductor)
GT50J121 - silicon N-channel IGBT (Toshiba Semiconductor)
GT50J122 - silicon N-channel IGBT (Toshiba Semiconductor)
GT50J301 - silicon N-channel IGBT (Toshiba Semiconductor)

Other Datasheets by Toshiba

GT50NR21 - Silicon N-Channel IGBT
GT50J101 - TRANSISTOR IGBT
GT50J123 - Silicon N-Channel IGBT
GT50J341 - Silicon N-Channel IGBT
GT50J342 - Silicon N-Channel IGBT
GT50JR21 - Silicon N-Channel IGBT

Published: Feb 12, 2017 |