Datasheet4U Logo Datasheet4U.com

GT50N322A Datasheet - Toshiba Semiconductor

GT50N322A-ToshibaSemiconductor.pdf

Preview of GT50N322A PDF
GT50N322A Datasheet Preview Page 2 GT50N322A Datasheet Preview Page 3

Datasheet Details

Part number:

GT50N322A

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

138.32 KB

Description:

Silicon n-channel igbt.

GT50N322A, Silicon N-Channel IGBT

GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A Voltage Resonance Inverter Switching Application Fifth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.10 μs (typ.) (IC = 60 A) FRD : trr = 0.8 μs (typ.) (di/dt = 20 A/μs) Low saturation voltage: VCE (sat) = 2.2 V (typ.) (IC = 60 A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-e

GT50N322A Distributors

📁 Related Datasheet

📌 All Tags

Toshiba Semiconductor GT50N322A-like datasheet