* (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.08 µs (typ.) (IC = 50 A) FWD : trr = 0.35 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.45 V (typ.) (IC
GT50JR21 Datasheet (201.84 KB)
GT50JR21
201.84 KB
Silicon n-channel igbt.
Discrete IGBTs Silicon N-Channel IGBT
GT50JR21
GT50JR21
1. Applications
* Dedicated to Current-Resonant Inverter Switching Applications
Note.
📁 Related Datasheet
GT50JR22 Silicon N-Channel IGBT (Toshiba)
GT50J101 TRANSISTOR IGBT (Toshiba)
GT50J102 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J121 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J122 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J123 Silicon N-Channel IGBT (Toshiba)
GT50J301 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J322 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J325 Silicon N-Channel IGBT (Toshiba Semiconductor)
GT50J327 silicon N-channel IGBT (Toshiba Semiconductor)
