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GT50JR21 Datasheet - Toshiba

GT50JR21 Silicon N-Channel IGBT

GT50JR21 Features

* (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.08 µs (typ.) (IC = 50 A) FWD : trr = 0.35 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.45 V (typ.) (IC

GT50JR21 Datasheet (201.84 KB)

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Datasheet Details

Part number:

GT50JR21

Manufacturer:

Toshiba ↗

File Size:

201.84 KB

Description:

Silicon n-channel igbt.

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GT50JR21 Silicon N-Channel IGBT Toshiba

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