GT50J301 Datasheet - Toshiba Semiconductor

GT50J301 silicon N-channel IGBT

GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third generation IGBT z Enhancement mode type z High speed : tf = 0.30μs (Max.) z Low saturation voltage : VCE (sat) = 2.7V (Max.) z FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector Emitter Voltage Gate Emitter Voltage Collector Current .

GT50J301_ToshibaSemiconductor.pdf