GT50J301 Datasheet - Toshiba Semiconductor

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GT50J301 silicon N-channel IGBT

GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit.

GT50J301_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

GT50J301

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

415.52 KB

Description:

silicon N-channel IGBT

Applications

* MOTOR CONTROL APPLICATIONS Unit: mm z Third generation IGBT z Enhancement mode type z High speed : tf = 0.30μs (Max. ) z Low saturation voltage : VCE (sat) = 2.7V (Max. ) z FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Co

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GT50J301 silicon N-channel IGBT Toshiba Semiconductor

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