Part number:
GT50J301
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
415.52 KB
Description:
Silicon n-channel igbt.
GT50J301_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT50J301
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
415.52 KB
Description:
Silicon n-channel igbt.
GT50J301, silicon N-channel IGBT
GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third generation IGBT z Enhancement mode type z High speed : tf = 0.30μs (Max.) z Low saturation voltage : VCE (sat) = 2.7V (Max.) z FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector Emitter Voltage Gate Emitter Voltage Collector Current
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