GT50J102 Datasheet - Toshiba Semiconductor

GT50J102 silicon N-channel IGBT

GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed. : tf = 0.30μs (Max.) z Low saturation voltage. : VCE(sat) = 2.7V (Max.) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector Emitter Voltage Gate Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature.

GT50J102_ToshibaSemiconductor.pdf