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GT50J102 Datasheet - Toshiba Semiconductor

GT50J102_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

GT50J102

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

434.80 KB

Description:

Silicon n-channel igbt.

GT50J102, silicon N-channel IGBT

GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed.

: tf = 0.30μs (Max.) z Low saturation voltage.

: VCE(sat) = 2.7V (Max.) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector Emitter Voltage Gate Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature

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