Part number:
GT50J102
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
434.80 KB
Description:
Silicon n-channel igbt.
GT50J102_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT50J102
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
434.80 KB
Description:
Silicon n-channel igbt.
GT50J102, silicon N-channel IGBT
GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed.
: tf = 0.30μs (Max.) z Low saturation voltage.
: VCE(sat) = 2.7V (Max.) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector Emitter Voltage Gate Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature
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