Part number:
GT50J122
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
155.17 KB
Description:
Silicon n-channel igbt.
GT50J122-ToshibaSemiconductor.pdf
Datasheet Details
GT50J122-ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT50J122
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
155.17 KB
Description:
Silicon n-channel igbt.
GT50J122, silicon N-channel IGBT
GT50J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J122 Current Resonance Inverter Switching Application Enhancement mode type High speed : tf = 0.16 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A) Fourth-generation IGBT TO-3P(N) (Toshiba package name) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector curre
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