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GT50J322 - silicon N-channel IGBT

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GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Unit: mm z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25μs (Typ.) (IC = 50A) z Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage Gate−Emitter Voltage Collector Current DC 1ms Emitter-Collector Foward Current DC 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range VCES VGES IC ICP IF IFP PC Tj Tstg 600 ±20 50 100 30 60 130 150 −55~150 V V A A W °C °C JEDEC ⎯ JEITA ⎯ TOSHIBA 2-21F2C Weight: 9.75 g (typ.
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