Part number:
GT50J322
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
609.99 KB
Description:
Silicon n-channel igbt.
GT50J322_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT50J322
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
609.99 KB
Description:
Silicon n-channel igbt.
GT50J322, silicon N-channel IGBT
GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Unit: mm z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25μs (Typ.) (IC = 50A) z Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector Emitter Voltage Gate Emitter Voltage Collector
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