GT50J322 Datasheet - Toshiba Semiconductor

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GT50J322 silicon N-channel IGBT

GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLIC.

GT50J322_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

GT50J322

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

609.99 KB

Description:

silicon N-channel IGBT

Applications

* Unit: mm z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25μs (Typ. ) (IC = 50A) z Low saturation voltage : VCE (sat) = 2.1V (Typ. ) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector
* Emitter Voltag

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GT50J322 silicon N-channel IGBT Toshiba Semiconductor

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