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GT50N324 - silicon N-channel IGBT

Datasheet Summary

Features

  • (1) Sixth generation (2) Enhancement mode (3) High-speed switching: IGBT tf = 0.11 µs (typ. ) (IC = 60 A) FRD trr = 0.8 µs (typ. ) (di/dt = -20 A/µs) (4) Low saturation voltage: VCE(sat) = 1.9 V (typ. ) (IC = 60 A) (5) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50N324 TO-3P(N) 1: Gate 2: Collector 3: Emitter ©2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2008-03 2019-11-18 Rev.2.0 GT50N324 4. Absolute Maximum Ratin.

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Datasheet Details

Part number GT50N324
Manufacturer Toshiba
File Size 555.73 KB
Description silicon N-channel IGBT
Datasheet download datasheet GT50N324 Datasheet
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Full PDF Text Transcription

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Discrete IGBTs Silicon N-Channel IGBT GT50N324 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) Sixth generation (2) Enhancement mode (3) High-speed switching: IGBT tf = 0.11 µs (typ.) (IC = 60 A) FRD trr = 0.8 µs (typ.) (di/dt = -20 A/µs) (4) Low saturation voltage: VCE(sat) = 1.9 V (typ.) (IC = 60 A) (5) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50N324 TO-3P(N) 1: Gate 2: Collector 3: Emitter ©2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2008-03 2019-11-18 Rev.2.0 GT50N324 4.
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