GT50N324 - silicon N-channel IGBT

Product Overview

Toshiba

Part number	GT50N324
Manufacturer	Toshiba
File Size	555.73 KB
Description	silicon N-channel IGBT
Datasheet	GT50N324 Datasheet
Additional preview pages of the GT50N324 datasheet.

(1) Sixth generation (2) Enhancement mode (3) High-speed switching: IGBT tf = 0.11 µs (typ. ) (IC = 60 A) FRD trr = 0.8 µs (typ. ) (di/dt = -20 A/µs) (4) Low saturation voltage: VCE(sat) = 1.9 V (typ. ) (IC = 60 A) (5) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50N324 TO-3P(N) 1: Gate 2: Collector 3: Emitter ©2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2008-03 2019-11-18 Rev.2.0 GT50N324 4. Absolute Maximum Ratin.

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Published: Feb 12, 2017 |