GT50NR21 Datasheet Silicon N-Channel IGBT

Manufacturer: Toshiba

Overview: Discrete IGBTs Silicon N-Channel IGBT GT50NR21 GT50NR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2.

📥 Download Datasheet

GT50NR21 silicon n-channel igbt by Toshiba - Datasheet Preview

Datasheet Details

Part number	GT50NR21
Manufacturer	Toshiba
File Size	216.31 KB
Description	Silicon N-Channel IGBT
Download	GT50NR21 Download (PDF)

Key Features

(1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.20 µs (typ. ) (IC = 50 A) FWD : trr = 0.50 µs (typ. ) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.8 V (typ. ) (IC = 50 A) (6) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2010-09 1 2014-01-07 Rev.3.0 GT50NR21.

More Datasheets from Toshiba

Part Number	Description
GT50N324	silicon N-channel IGBT
GT50J101	TRANSISTOR IGBT
GT50J123	Silicon N-Channel IGBT
GT50J341	Silicon N-Channel IGBT
GT50J342	Silicon N-Channel IGBT
GT50JR21	Silicon N-Channel IGBT
GT50JR22	Silicon N-Channel IGBT
GT5G134	Silicon N-Channel IGBT