Datasheet4U Logo Datasheet4U.com

GT50NR21 - Silicon N-Channel IGBT

Datasheet Summary

Features

  • (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.20 µs (typ. ) (IC = 50 A) FWD : trr = 0.50 µs (typ. ) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.8 V (typ. ) (IC = 50 A) (6) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2010-09 1 2014-01-07 Rev.3.0 GT50NR21.

📥 Download Datasheet

Datasheet preview – GT50NR21

Datasheet Details

Part number GT50NR21
Manufacturer Toshiba
File Size 216.31 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet GT50NR21 Datasheet
Additional preview pages of the GT50NR21 datasheet.

📁 Similar Datasheet

  • GT50N321 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50N322A - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT50G102 - Insulated Gate Bipolar Transistor (ETC)
  • GT50G321 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J102 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J121 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J122 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J301 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J322 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J325 - Silicon N-Channel IGBT (Toshiba Semiconductor)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
Discrete IGBTs Silicon N-Channel IGBT GT50NR21 GT50NR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 50 A) FWD : trr = 0.50 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.8 V (typ.) (IC = 50 A) (6) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2010-09 1 2014-01-07 Rev.3.0 GT50NR21 4.
Published: |