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GT50J122 - silicon N-channel IGBT

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Part number GT50J122
Manufacturer Toshiba Semiconductor
File Size 155.17 KB
Description silicon N-channel IGBT
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GT50J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J122 Current Resonance Inverter Switching Application • • • • • Enhancement mode type High speed : tf = 0.16 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A) Fourth-generation IGBT TO-3P(N) (Toshiba package name) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Collector power dissipation Junction temperature Storage temperature range @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±25 31 50 120 62 156 150 −55 to 150 Unit V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-16C1C Weight: 4.6 g (typ.
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