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GT50J122
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J122
Current Resonance Inverter Switching Application
• • • • • Enhancement mode type High speed : tf = 0.16 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A) Fourth-generation IGBT TO-3P(N) (Toshiba package name) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Collector power dissipation Junction temperature Storage temperature range @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±25 31 50 120 62 156 150 −55 to 150 Unit V V A A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-16C1C
Weight: 4.6 g (typ.
GT50J122 Datasheet
