| Part number | GT50J122 |
|---|---|
| Datasheet | GT50J122-ToshibaSemiconductor.pdf |
| File Size | 155.17 KB |
| Manufacturer | Toshiba |
| Description | silicon N-channel IGBT |
|
|
GT50J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J122 Current Resonance Inverter Switching Application Enhancement mode type High speed : tf = 0.16 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A) Fourth-generation IGBT TO-3P(N) (Toshiba package name) Unit:.
| Part Number | Description |
|---|---|
| GT50J121 | silicon N-channel IGBT |
| GT50J102 | silicon N-channel IGBT |
| GT50J301 | silicon N-channel IGBT |
| GT50J322 | silicon N-channel IGBT |
| GT50J325 | Silicon N-Channel IGBT |
| GT50J327 | silicon N-channel IGBT |
| GT50J328 | Silicon N-Channel IGBT |
| GT50G321 | silicon N-channel IGBT |
| GT50MR21 | silicon N-channel IGBT |
| GT50N321 | silicon N-channel IGBT |
