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GT50J325
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J325
High Power Switching Applications Fast Switching Applications
Unit: mm
• Fourth generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference)
• High speed: tf = 0.05 μs (typ.) • Low switching loss: Eon = 1.30 mJ (typ.)
: Eoff = 1.34 mJ (typ.) • Low saturation Voltage: VCE (sat) = 2.0 V (typ.
GT50J325 Datasheet
