Datasheet Summary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
High Power Switching Applications Fast Switching Applications
Unit: mm
- Fourth generation IGBT
- Enhancement mode type
- Fast switching (FS): Operating frequency up to 50 kHz (reference)
- High speed: tf = 0.05 μs (typ.)
- Low switching loss: Eon = 1.30 mJ (typ.)
: Eoff = 1.34 mJ (typ.)
- Low saturation Voltage: VCE (sat) = 2.0 V (typ.)
- FRD included between emitter and...