Datasheet4U Logo Datasheet4U.com

GT50J325 - Silicon N-Channel IGBT

📥 Download Datasheet

Datasheet preview – GT50J325

Datasheet Details

Part number GT50J325
Manufacturer Toshiba Semiconductor
File Size 222.46 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet GT50J325 Datasheet
Additional preview pages of the GT50J325 datasheet.

📁 Similar Datasheet

  • GT50J341 - Silicon N-Channel IGBT (Toshiba)
  • GT50J342 - Silicon N-Channel IGBT (Toshiba)
  • GT50J101 - TRANSISTOR IGBT (Toshiba)
  • GT50J123 - Silicon N-Channel IGBT (Toshiba)
  • GT50JR21 - Silicon N-Channel IGBT (Toshiba)
  • GT50JR22 - Silicon N-Channel IGBT (Toshiba)
  • GT50G102 - Insulated Gate Bipolar Transistor (ETC)
  • GT50N324 - silicon N-channel IGBT (Toshiba)
  • GT50NR21 - Silicon N-Channel IGBT (Toshiba)
  • GT52N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) • High speed: tf = 0.05 μs (typ.) • Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.) • Low saturation Voltage: VCE (sat) = 2.0 V (typ.
Published: |