Silicon N-channel IGBT
| Part number | GT50J327 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 184.67 KB |
| Description | silicon N-channel IGBT |
| Datasheet | GT50J327_ToshibaSemiconductor.pdf |
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GT50J327 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J327 Current Resonance Inverter Switching Application Enhancement mode type High speed : tf = 0.19 µs (typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50A) FRD included between emitter and collector Fourth generation IGBT TO-3P(N) (Toshiba package name) Unit:.
| Part Number | Description |
|---|---|
| GT50J322 | silicon N-channel IGBT |
| GT50J325 | Silicon N-Channel IGBT |
| GT50J328 | Silicon N-Channel IGBT |
| GT50J301 | silicon N-channel IGBT |
| GT50J102 | silicon N-channel IGBT |
| GT50J121 | silicon N-channel IGBT |
| GT50J122 | silicon N-channel IGBT |
| GT50G321 | silicon N-channel IGBT |
| GT50MR21 | silicon N-channel IGBT |
| GT50N321 | silicon N-channel IGBT |
