Datasheet4U Logo Datasheet4U.com

GT50J327 - silicon N-channel IGBT

📥 Download Datasheet

Datasheet preview – GT50J327

Datasheet Details

Part number GT50J327
Manufacturer Toshiba Semiconductor
File Size 184.67 KB
Description silicon N-channel IGBT
Datasheet download datasheet GT50J327 Datasheet
Additional preview pages of the GT50J327 datasheet.

📁 Similar Datasheet

  • GT50J341 - Silicon N-Channel IGBT (Toshiba)
  • GT50J342 - Silicon N-Channel IGBT (Toshiba)
  • GT50J101 - TRANSISTOR IGBT (Toshiba)
  • GT50J123 - Silicon N-Channel IGBT (Toshiba)
  • GT50JR21 - Silicon N-Channel IGBT (Toshiba)
  • GT50JR22 - Silicon N-Channel IGBT (Toshiba)
  • GT50G102 - Insulated Gate Bipolar Transistor (ETC)
  • GT50N324 - silicon N-channel IGBT (Toshiba)
  • GT50NR21 - Silicon N-Channel IGBT (Toshiba)
  • GT52N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com GT50J327 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J327 Current Resonance Inverter Switching Application • • • • • • Enhancement mode type High speed : tf = 0.19 µs (typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 1.9 V (typ.
Published: |