GT50J327 - silicon N-channel IGBT

Toshiba

Datasheet Details

Part number	GT50J327
Manufacturer	Toshiba
File Size	184.67 KB
Description	silicon N-channel IGBT
Datasheet	GT50J327 Datasheet

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www.DataSheet4U.com GT50J327 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J327 Current Resonance Inverter Switching Application • • • • • • Enhancement mode type High speed : tf = 0.19 µs (typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 1.9 V (typ.