Datasheet Summary
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
Unit: mm z Third generation IGBT z Enhancement mode type z High speed
: tf = 0.30μs (Max.) z Low saturation voltage : VCE (sat) = 2.7V (Max.) z FRD included between emitter and...