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GT50J301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT50J301
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
Unit: mm
z Third generation IGBT
z Enhancement mode type
z High speed
: tf = 0.30μs (Max.)
z Low saturation voltage : VCE (sat) = 2.7V (Max.)
z FRD included between emitter and collector
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current
DC 1ms
Forward Current
DC 1ms
Collector Power Dissipation (Tc = 25°C)
Junction Temperature
Storage Temperature
Screw Torque
VCES VGES
IC ICP IF IFM
PC
Tj Tstg ―
600 ±20 50 100 50 100
200
150 −55~150
0.8
V V A
A
W °C °C N·m
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.
GT50J301 Datasheet
