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GT50J301 - silicon N-channel IGBT

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Part number GT50J301
Manufacturer Toshiba Semiconductor
File Size 415.52 KB
Description silicon N-channel IGBT
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Full PDF Text Transcription

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GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third generation IGBT z Enhancement mode type z High speed : tf = 0.30μs (Max.) z Low saturation voltage : VCE (sat) = 2.7V (Max.) z FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage Gate−Emitter Voltage Collector Current DC 1ms Forward Current DC 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Screw Torque VCES VGES IC ICP IF IFM PC Tj Tstg ― 600 ±20 50 100 50 100 200 150 −55~150 0.8 V V A A W °C °C N·m JEDEC ⎯ JEITA ⎯ TOSHIBA 2-21F2C Weight: 9.75 g (typ.
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