Datasheet Summary
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
Unit: mm z FRD included between emitter and collector z Enhancement mode type z High speed
: tf = 0.25μs (Typ.) (IC = 50A) z Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC =...