| Part number | GT50J322 |
|---|---|
| Datasheet | GT50J322_ToshibaSemiconductor.pdf |
| File Size | 609.99 KB |
| Manufacturer | Toshiba |
| Description | silicon N-channel IGBT |
|
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GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Unit: mm z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25μs (Typ.) (IC = 50A) z Low saturation voltage.
| Part Number | Description |
|---|---|
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| GT50MR21 | silicon N-channel IGBT |
| GT50N321 | silicon N-channel IGBT |
