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GT50J322
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT50J322
FOURTH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
Unit: mm
z FRD included between emitter and collector
z Enhancement mode type
z High speed
: tf = 0.25μs (Typ.) (IC = 50A)
z Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current
DC 1ms
Emitter-Collector Foward Current
DC 1ms
Collector Power Dissipation (Tc = 25°C)
Junction Temperature
Storage Temperature Range
VCES VGES
IC ICP IF IFP
PC
Tj Tstg
600 ±20 50 100 30 60
130
150 −55~150
V V A
A
W °C °C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.
GT50J322 Datasheet
