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GT50J102 - silicon N-channel IGBT

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Part number GT50J102
Manufacturer Toshiba Semiconductor
File Size 434.80 KB
Description silicon N-channel IGBT
Datasheet download datasheet GT50J102 Datasheet
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GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed. : tf = 0.30μs (Max.) z Low saturation voltage. : VCE(sat) = 2.7V (Max.) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage Gate−Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Screw Torque DC 1ms VCES VGES IC ICP PC Tj Tstg ― 600 ±20 50 100 200 150 −55~150 0.8 V V A W °C °C N･m JEDEC ⎯ JEITA ⎯ TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Note: Using continuously under heavy loads (e.g.
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