The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
GT50J102
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT50J102
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
Unit: mm
z Third-generation IGBT
z Enhancement mode type
z High speed.
: tf = 0.30μs (Max.)
z Low saturation voltage. : VCE(sat) = 2.7V (Max.)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage Gate−Emitter Voltage
Collector Current
Collector Power Dissipation Junction Temperature Storage Temperature Range Screw Torque
DC 1ms
VCES VGES
IC ICP PC Tj Tstg ―
600 ±20 50 100 200 150 −55~150 0.8
V V
A
W °C °C N･m
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g.
GT50J102 Datasheet
