Datasheet Summary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
High Power Switching Applications Fast Switching Applications
- -
- The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference)
- High speed: tf = 0.05 µs (typ.)
- Low switching loss : Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.)
- Low saturation Voltage: VCE (sat) = 2.0 V (typ.) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±20 50 100 240 150
- 55 to 150...