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GT50J121 - silicon N-channel IGBT

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Part number GT50J121
Manufacturer Toshiba Semiconductor
File Size 315.74 KB
Description silicon N-channel IGBT
Datasheet download datasheet GT50J121 Datasheet
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GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • • • The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) • High speed: tf = 0.05 µs (typ.) • Low switching loss : Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.) • Low saturation Voltage: VCE (sat) = 2.0 V (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±20 50 100 240 150 −55 to 150 Unit V V A W °C °C JEDEC JEITA TOSHIBA Weight: 9.
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