| Part number | GT50J121 |
|---|---|
| Datasheet | GT50J121-ToshibaSemiconductor.pdf |
| File Size | 315.74 KB |
| Manufacturer | Toshiba |
| Description | silicon N-channel IGBT |
|
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GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 µs (typ.) Low switching loss.
| Part Number | Description |
|---|---|
| GT50J122 | silicon N-channel IGBT |
| GT50J102 | silicon N-channel IGBT |
| GT50J301 | silicon N-channel IGBT |
| GT50J322 | silicon N-channel IGBT |
| GT50J325 | Silicon N-Channel IGBT |
| GT50J327 | silicon N-channel IGBT |
| GT50J328 | Silicon N-Channel IGBT |
| GT50G321 | silicon N-channel IGBT |
| GT50MR21 | silicon N-channel IGBT |
| GT50N321 | silicon N-channel IGBT |
