| Part number | GT50J328 |
|---|---|
| Datasheet | GT50J328-ToshibaSemiconductor.pdf |
| File Size | 221.19 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
|
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GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Fourth Generation IGBT Enhancement mode type High speed : tf = 0.1 μs (Typ.) Low saturation voltage : VCE (sat) = 2.0 V (Typ.) Unit:.
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