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GT50J328 - Silicon N-Channel IGBT

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Part number GT50J328
Manufacturer Toshiba Semiconductor
File Size 221.19 KB
Description Silicon N-Channel IGBT
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GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Fourth Generation IGBT • • • Enhancement mode type High speed : tf = 0.1 μs (Typ.) Low saturation voltage : VCE (sat) = 2.0 V (Typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Diode forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 600 ±25 50 120 30 120 140 150 −55 to 150 Unit V V A A W °C °C JEDEC ― Note: JEITA ― Using continuously under heavy loads (e.g.
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