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GT50J328
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J328
Current Resonance Inverter Switching Application Fourth Generation IGBT
• • • Enhancement mode type High speed : tf = 0.1 μs (Typ.) Low saturation voltage : VCE (sat) = 2.0 V (Typ.) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Diode forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 600 ±25 50 120 30 120 140 150 −55 to 150 Unit V V A A W °C °C
JEDEC
―
Note:
JEITA ― Using continuously under heavy loads (e.g.
GT50J328 Datasheet
