| Part number | GT50G321 |
|---|---|
| Download | GT50G321 Datasheet (PDF) |
| File Size | 147.25 KB |
| Manufacturer | Toshiba |
| Description | silicon N-channel IGBT |
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| Part Number | Description |
|---|---|
| GT50J102 | silicon N-channel IGBT |
| GT50J121 | silicon N-channel IGBT |
| GT50J122 | silicon N-channel IGBT |
| GT50J301 | silicon N-channel IGBT |
| GT50J322 | silicon N-channel IGBT |
GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 The 4th Generation Current Resonance Inverter Switching Applications Unit: mm · FRD included between emitter and collector · Enhancement-mode · High speed: tf = 0.30 µs (typ.) (IC = 60 A) · Low saturation voltage:.
