Datasheet Summary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
The 4th Generation Current Resonance Inverter Switching Applications
Unit: mm
- FRD included between emitter and collector
- Enhancement-mode
- High speed: tf = 0.30 µs (typ.) (IC = 60 A)
- Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1 ms
Emitter-collector foward current
DC 1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCES VGES
IC ICP IF IFP
Tj Tstg
Rating
400 ±25 50 100 15 30
- 55 to 150
Equivalent...