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GT50G321 - silicon N-channel IGBT

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Part number GT50G321
Manufacturer Toshiba Semiconductor
File Size 147.25 KB
Description silicon N-channel IGBT
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GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 The 4th Generation Current Resonance Inverter Switching Applications Unit: mm · FRD included between emitter and collector · Enhancement-mode · High speed: tf = 0.30 µs (typ.) (IC = 60 A) · Low saturation voltage: VCE (sat) = 1.8 V (typ.
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