Datasheet Details
- Part number
- SCT040H120G3-7
- Manufacturer
- STMicroelectronics ↗
- File Size
- 367.52 KB
- Datasheet
- SCT040H120G3-7-STMicroelectronics.pdf
- Description
- Silicon carbide Power MOSFET
SCT040H120G3-7 Description
SCT040H120G3-7 Datasheet Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver sou.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
SCT040H120G3-7 Features
* Order code
VDS
RDS(on) typ. ID
SCT040H120G3-7
1200 V
40 mΩ
40 A
* Very fast and robust intrinsic body diode
* Very low RDS(on) over the entire temperature range
* High speed switching performances
SCT040H120G3-7 Applications
* Switching mode power supply
* Power supply for renewable energy systems
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