* Order code VDS RDS(on) typ. ID SCT040H120G3-7 1200 V 40 mΩ 40 A
* Very fast and robust intrinsic body diode
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Source sensing pin for increased efficiency Application
SCT040H120G3-7 Datasheet (367.52 KB)
SCT040H120G3-7
367.52 KB
Silicon carbide power mosfet.
SCT040H120G3-7
Datasheet
Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Gate (1) Driver sou.
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