SCT040H120G3-7 Silicon carbide Power MOSFET

STMicroelectronics

Description

SCT040H120G3-7 Datasheet Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver sou.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCT040H120G3-7
Manufacturer: STMicroelectronics ↗
File Size: 367.52 KB
Datasheet: SCT040H120G3-7-STMicroelectronics.pdf
Description: Silicon carbide Power MOSFET

Features

* Order code VDS RDS(on) typ. ID SCT040H120G3-7 1200 V 40 mΩ 40 A
* Very fast and robust intrinsic body diode
* Very low RDS(on) over the entire temperature range
* High speed switching performances

Applications

* Switching mode power supply
* Power supply for renewable energy systems

SCT040H120G3-7 Distributors

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SCT040H120G3-7 Silicon carbide Power MOSFET STMicroelectronics

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