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SCT040H65G3AG Automotive-grade silicon carbide Power MOSFET

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Description

SCT040H65G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Features

* Order code SCT040H65G3AG VDS 650 V RDS(on) typ. 40 mΩ ID 30 A
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased

Applications

* DC/DC converter for EV/HEV
* Main inverter (electric traction)

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