SCT04N60E Datasheet, Triac, KODENSHI

SCT04N60E Features

• Triac y Repetitive Peak Off-State Voltage : VDRM=600V y R.M.S On-State Current : IT(RMS)=4A y High Commutation: (dI/dt)C =3.7 A/㎳(Min) Applications y Switching mode power supply, light dimmet

PDF File Details

Part number:

SCT04N60E

Manufacturer:

KODENSHI

File Size:

379.71kb

Download:

📄 Datasheet

Description:

4a standard triac.

SCT04N60E Application

• Applications y Switching mode power supply, light dimmet y TV sets, stereo, refrigerator, washing machine y Electric blanket, solenoid driver, small

TAGS

SCT04N60E

KODENSHI

📁 Related Datasheet

SCT04N60D - 4A Standard Triac (KODENSHI)
SCT04N60D Triac 600V, 4A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed .

SCT04N60FD - 4A Standard Triac (KODENSHI)
SCT04N60FD Triac 600V, 4A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed.

SCT04N60P - 4A Standard Triac (KODENSHI)
SCT04N60P Triac 600V, 4A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed .

SCT040H120G3-7 - Silicon carbide Power MOSFET (STMicroelectronics)
SCT040H120G3-7 Datasheet Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver sou.

SCT040H120G3AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT040H120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Ga.

SCT040H65G3AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT040H65G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Feat.

SCT040H65G3SAG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT040H65G3SAG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 straight leads package TAB 7 1 H2PAK-7 s.

SCT040HU120G3AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT040HU120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HU3PAK package Features TAB Order code VDS .

SCT040HU65G3AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT040HU65G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an HU3PAK package TAB Gate (1) Driver source (2) 7.

SCT040TO65G3 - Silicon carbide Power MOSFET (STMicroelectronics)
SCT040TO65G3 Datasheet Silicon carbide Power MOSFET 650 V, 40 mΩ typ., 35 A in a TO-LL package Gate (1) Driver source (2) Features TO-LL Order cod.