Datasheet Details
- Part number
- SCT040HU120G3AG
- Manufacturer
- STMicroelectronics ↗
- File Size
- 619.21 KB
- Datasheet
- SCT040HU120G3AG-STMicroelectronics.pdf
- Description
- Automotive-grade silicon carbide Power MOSFET
SCT040HU120G3AG Description
SCT040HU120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HU3PAK package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
SCT040HU120G3AG Features
* TAB
Order code
VDS
RDS(on) typ. ID
7
SCT040HU120G3AG
1200 V
40 mΩ
40 A
Gate (1) Driver source (2)
1 HU3PAK
Drain (TAB)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed swit
SCT040HU120G3AG Applications
* DC/DC converter for EV/HEV
* Main inverter (electric traction)
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