SCT040H65G3SAG - Automotive-grade silicon carbide Power MOSFET

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STMicroelectronics

Part number	SCT040H65G3SAG
Manufacturer	STMicroelectronics
File Size	223.07 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCT040H65G3SAG Datasheet
Additional preview pages of the SCT040H65G3SAG datasheet.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Order code SCT040H65G3SAG VDS 650 V RDS(on) max. 55 mΩ ID 30 A.
AEC-Q101 qualified.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Source sensing pin for increased efficiency Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB.

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Published: Mar 1, 2023 |