Datasheet Details
- Part number
- SCT040H65G3SAG
- Manufacturer
- STMicroelectronics ↗
- File Size
- 223.07 KB
- Datasheet
- SCT040H65G3SAG-STMicroelectronics.pdf
- Description
- Automotive-grade silicon carbide Power MOSFET
SCT040H65G3SAG Description
SCT040H65G3SAG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 straight leads package TAB 7 1 H2PAK-7 s.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
SCT040H65G3SAG Features
* Order code SCT040H65G3SAG
VDS 650 V
RDS(on) max. 55 mΩ
ID 30 A
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased effi
SCT040H65G3SAG Applications
* Main inverter (electric traction)
* DC/DC converter for EV/HEV
📁 Related Datasheet
📌 All Tags