SCT040H120G3AG Datasheet - STMicroelectronics

SCT040H120G3AG, Automotive-grade silicon carbide Power MOSFET

SCT040H120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Ga.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

SCT040H120G3AG-STMicroelectronics.pdf

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Datasheet Details

Part number:

SCT040H120G3AG

Manufacturer:

STMicroelectronics ↗

File Size:

504.16 KB

Description:

Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCT040H120G3AG VDS 1200 V RDS(on) typ. 40 mΩ ID 40 A
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increase

Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

SCT040H120G3AG Distributors

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SCT040H120G3AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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