* Order code SCT040H120G3AG VDS 1200 V RDS(on) typ. 40 mΩ ID 40 A
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increase
SCT040H120G3AG Datasheet (504.16 KB)
SCT040H120G3AG
504.16 KB
Automotive-grade silicon carbide power mosfet.
SCT040H120G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Ga.
📁 Related Datasheet
SCT040H120G3-7 Silicon carbide Power MOSFET (STMicroelectronics)
SCT040H65G3AG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT040H65G3SAG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT040HU120G3AG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT040HU65G3AG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT040TO65G3 Silicon carbide Power MOSFET (STMicroelectronics)
SCT040W120G3-4AG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT040W120G3AG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCT040W65G3-4 Silicon carbide Power MOSFET (STMicroelectronics)
SCT04N60D 4A Standard Triac (KODENSHI)
