SCT040TO65G3 - Silicon carbide Power MOSFET

STMicroelectronics

SCT040TO65G3 Description

SCT040TO65G3 Datasheet Silicon carbide Power MOSFET 650 V, 40 mΩ typ., 35 A in a TO-LL package Gate (1) Driver source (2) .
Power source (3, 4, 5, 6, 7, 8) N-chG1DS2PS34567DTAB This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative.

SCT040TO65G3 Features

* TO-LL Order code VDS RDS(on) typ. ID SCT040TO65G3 650 V 40 mΩ 35 A
* Very fast and robust intrinsic body diode
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Source sensing pin for increased efficiency Drain (

SCT040TO65G3 Applications

* Switching mode power supply

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Datasheet Details

Part number: SCT040TO65G3
Manufacturer: STMicroelectronics ↗
File Size: 1.49 MB
Datasheet: SCT040TO65G3-STMicroelectronics.pdf
Description: Silicon carbide Power MOSFET

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Silicon carbide Power MOSFET STMicroelectronics

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