1.60-1.65 Datasheet | Specifications & PDF Download

MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th

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SLP65R170E7/SLF65R170E7 SLP65R170E7 / SLF65R170E7 650V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced

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HD66520T (160-Channel 4-Level Grayscale Display Column Driver with Internal Bit-Map RAM) Preliminary Description The HD66520 is a column driver for l

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HIGH-VOLTAGE MIXED-SIGNAL IC 65x192 STN Controller-Driver MP Specifications August 3, 2012 ULTRACHIP The Coolest LCD Driver, Ever ULTRACHIP ©1999

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AOK060V65X2 650V αSiC Silicon Carbide Power MOSFET Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS,(ON) • Fast switching with

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XPTTM 650V IGBT IXXH60N65B4H1 GenX4TM w/ Sonic Diode Extreme Light Punch Through IGBT for 5-30 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110

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K4A60D-VB K4A60D-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC)

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XPTTM 650V GenX5TM IGBT IXYP60N65A5 Extreme Light Punch Through IGBT for up to 10kHz Switching VCES = 650V I = 60A C110 V  1.35V CE(sat) t

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www.vishay.com 600D Vishay Sprague Aluminum Capacitors Miniature, Axial Lead, High Reliability FEATURES • Life test 2000 h at +125 °C • Wide temp

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K12A60W-VB K12A60W-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC)

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WSJM65R600S Super-Junction Power MOSFET Rev.01 - 29 April 2024 Product data sheet 1. General description WSJM65R600S is a high voltage N-channel MOS

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P5NK60ZFP-VB P5NK60ZFP-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max.

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IPT60R065S7 MOSFET 600V CoolMOSª SJ S7 Power Device IPT60R065S7 enables the best price performance for low frequency switching applications. CoolMOS™

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Date:- 20th May, 2016 Data Sheet Issue:- P1 Medium Voltage Thyristor Types K0560QE600 & K0560QE650 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VO

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AOK065A60FD 600V, a MOS5 TM N-Channel Power Transistor General Description Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimiz

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BRF6N60-VB BRF6N60-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC

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W20NM60FD-VB www.VBsemi.com W20NM60FD-VB Datasheet N-Channel 650 V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at

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WSJM65R360S Super-Junction Power MOSFET Rev.01 - 29 April 2024 Product data sheet 1. General description WSJM65R360S is a high voltage N-channel MOS

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Product Description Sirenza Microdevices’ SDM-08060-B1F 65W power module is a robust, impedance matched, single-stage, push-pull Class AB amplifier mo

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