1.60-1.65 Datasheet | Specifications & PDF Download

MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th

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SLP65R170E7/SLF65R170E7 SLP65R170E7 / SLF65R170E7 650V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced

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FGA60N65SMD — 650 V, 60 A Field Stop IGBT October 2013 FGA60N65SMD 650 V, 60 A Field Stop IGBT Features • Maximum Junction Temperature : TJ = • High

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NCE65R360D,NCE65R360,NCE65R360F N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction techno

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NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super jun

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www.DataSheet4U.com QFP QUAD FLAT PACKAGE Applicable IC/QFP · TQFP OPEN TOP TYPE SOCKETS ORDERING PROCEDURE OTQ - - Design NO. Pitch Pin Count

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IGBT - Field Stop, Trench, Soft Fast Recovery Diode 650 V, 160 A FGY160T65SPD-F085 Benefits • Very Low Conduction and Switching Losses for a High Effi

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P5NK60ZFP-VB P5NK60ZFP-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max.

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NSF65R600C N-channel 650V Super Junction MOSFET Description NSF65R600C is a N-channel power MOSFET designed according to super junction technology. Th

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PFP65T360 / PFF65T360 PFP65T360 / PFF65T360 N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low cond

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N R N-CHANNEL MOSFET MS65R360 MAIN CHARACTERISTICS ID VDSS Rdson-max （@Vgs=10V） Qg-typ 11A 650 V 0.40Ω 22 nC Package    LED APPLICA

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Date:- 8th December, 2014 Data Sheet Issue:- A1 Phase Control Thyristor Types N3165HA260 and N3165HA280 Development Type No.: NX450HA260 and NX450HA2

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www.DataSheet4U.com QFP QUAD FLAT PACKAGE Applicable IC/QFP · TQFP OPEN TOP TYPE SOCKETS ORDERING PROCEDURE OTQ - - Design NO. Pitch Pin Count

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MMD65R600Q Datasheet MMD65R600Q 650V 0.60Ω N-channel MOSFET  Description MMD65R600Q is power MOSFET using Magnachip’s advanced super junction techno

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PCGA160T65NF8 650V, 160A Field Stop Trench IGBT PCGA160T65NF8 650 V, 160 A Field Stop Trench IGBT Features „ AEC-Q101 Qualified „ Max Junction Temper

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P6NC60FP-VB P6NC60FP-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (

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