10-CHANNEL Datasheet | Specifications & PDF Download

J105 / J106 / J107 — N-Channel Switch J105 / J106 / J107 N-Channel Switch Description This device is designed for analog or digital switching applica

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MOSFET – N-Channel, POWERTRENCH) 100 V, 57 A, 16 mW FDI150N10 Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH proce

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

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MOSFETs Silicon N-Channel MOS (DTMOS) TK10A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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J/SST108 Series Vishay Siliconix N–Channel JFETs J108 J109 J110 PRODUCT SUMMARY Part Number J/SST108 J/SST109 J/SST110 VGS(off) (V) –3 to –10 –2

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FDB0165N807L N-Channel PowerTrench® MOSFET December 2015 FDB0165N807L N-Channel PowerTrench® MOSFET 80 V, 310 A, 1.6 mΩ Features General Descripti

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PJM10C30PA N and P-Channel Complementary Power MOSFET Product Summary ⚫ N-Channel ⚫ VDS= 30V,ID= 12A ⚫ RDS(on)< 15mΩ @VGS= 10V ⚫ RDS(on)< 20mΩ @VGS=

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N-Channel JFET Switch CORPORATION J108 – J110 / SST108 – SST110 FEATURES Low Cost Automated Insertion Package Low Insertion Loss No Offset or Error V

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SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N042 Rev. 0.9 Jul. 2021 www.su

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SPTP10R020HA 100V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=1.75mΩ@VGS=10V  Low Gate Charge Minimize Swit

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MOSFET – N-Channel, POWERTRENCH) 100 V, 300 A, 2.0 mW FDBL86062-F085 Features • Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) =

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FDMS9410L-F085 N-Channel Logic Level PowerTrench® MOSFET FDMS9410L-F085 N-Channel Logic Level PowerTrench® MOSFET 40 V, 50 A, 4.1 mΩ Features „ Typi

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B0210D N-Channel 100-V (D-S) MOSFET General Description B0210D is the N-Channel logic enhancement mode power field effect transistors to provide exce

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www.DataSheet4U.com J110 JFET − General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed f

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GOFORD G05NP10S N and P Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent

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Ordering number : ENA1010A ECH8651R N-Channel Power MOSFET 24V, 10A, 14mΩ, Dual ECH8 http://onsemi.com Features • Low ON-resistance • 2.5V drive •

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100V N-Channel MOSFET General Features  High speed power switching  RDS(ON),typ.=5.0mΩ@VGS=10V  Enhanced body diode dv/dt capability  Enhanced ava

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

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J108/J109/J110/MMBFJ108 J108/J109/J110/MMBFJ108 N-Channel Switch • This device is designed for digital switching applications where very low on resi

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