10-CHANNEL Datasheet | Specifications & PDF Download

SEMICONDUCTOR 10N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (10A, 600Volts) DESCRIPTION The Nell 10N60 is a three-terminal s

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STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RD

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Ordering number : EN 2307 STK4231 Thick Film Hybrid IC 2-Channel 100W min AF Power Amp (Dual Supplies)

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Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http:/

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N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely lo

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HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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Silan Microelectronics SVG108R5NAM(T)_Datasheet 94A, 100V N-CHANNEL MOSFET DESCRIPTION SVG108R5NAM(T) is an N-channel enhancement mode power MOS fi

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a 2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs AD7811/AD7812 FEATURES 10-Bit ADC with 2.3 ␮s Conversion Time The AD7811 has Four Sin

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

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AP10N70R/P-A Pb Free Plating Product Advanced Power Electronics Corp. ▼ 100% Avalanche Rated Test ▼ Fast Switching Performance ▼ Simple Drive Require

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A Product Line of Diodes Incorporated ZXMP10A17G 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.

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SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect

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 MT3203 1 &KDQQHO /RZ4JŠ 026)(7 9 $  PΩ   *HQHUDO'HVFULSWLRQ 7KLV1 &KDQQHO026)(7KDVEHHQGHVLJQHGVSHFLILFD

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Silan Microelectronics SVG104R5NT(S)(F)(KL)(S6)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancem

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isc N-Channel MOSFET Transistor RD3T100CN FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-

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HAA6801 BOOST , 2 ,AB /D ,2x10W HAA6801BOOST，2 、AB/D，2Ω  AB、D  ，-10dB 2x10W 。  D： －2x6.6W (VDD=4.2V, RL =4Ω，NCN OFF THD+N=10%) HAA6801，

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Semiconductor April 1999 T UCT ROD RODUC P E P T E E A) OL UT OBS UBSTIT HI-0508( , S A E G508 SIBL POS G408, D D IH6108 8-Channel CMOS Analog Mult

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