Part J108
Description N-channel silicon junction FETs
Manufacturer NXP Semiconductors
Size 45.26 KB
NXP Semiconductors
J108

Overview

  • High speed switching
  • Interchangeability of drain and source connections
  • Low RDSon at zero gate voltage (<8 Ω for J108). APPLICATIONS
  • Analog switches
  • Choppers and commutators. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSoff PARAMETER drain-source voltage gate-source cut-off voltage J108 J109 J110 IDSS drain current J108 J109 J110 Ptot total power dissipation up to Tamb = 50 °C VGS = 0; VDS = 5 V ID = 1 µA; VDS = 5 V CONDITIONS handbook, halfpage 2 J108; J109; J110