NCE Power Semiconductor
NCE65TF130 - N-Channel Super Junction Power MOSFET
NCE65TF130D,NCE65TF130,NCE65TF130F
N-Channel Super Junction Power MOSFET Ⅲ
General Description
The series of devices use advanced trench gate super
Rating:
1
★
(13 votes)
Silan Microelectronics
SVS7N65F - 650V SUPER JUNCTION MOS POWER TRANSISTOR
Silan Microelectronics
SVS7N65F/D/MJ_Datasheet
7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR
GENERAL DESCRIPTION
SVS7N65F/D/MJ is an N-channel enhan
Rating:
1
★
(11 votes)
InterFET Corporation
SMPJ174 - (SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors
E-2
01/99
www.DataSheet4U.com
Small Outline (Surface Mount) Package Devices
N-Channel Silicon Junction Field-Effect Transistors
Device Type BVGSS
M
Rating:
1
★
(11 votes)
Rectron Semiconductor
1N4003G - (1N4001G - 1N4007G) GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER
GLASSPASSIVATED J UNCTIONPLASTICRECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
1N4001G THRU
1N4007G
FEATURES
* High reliability * Low c
Rating:
1
★
(10 votes)
NCE Power Semiconductor
NCE70T540K - N-Channel Super Junction Power MOSFET
NCE70T540I,NCE70T540K
N-Channel Super Junction Power MOSFET Ⅲ
General Description
The series of devices use advanced trench gate super junction tech
Rating:
1
★
(9 votes)
Jingdao
BU103T - Bipolar Junction Transistor
R
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd.
BU103T
Bipolar Junction Transistor
◆Si NPN ◆RoHS COMPLIANT
1.APPLICATION
Fluorescent Lamp、E
Rating:
1
★
(9 votes)
Motorola
2N2646 - (2N2646 / 2N2647) Silicon PN unijunction transistor
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Rating:
1
★
(9 votes)
NCE Power Semiconductor
NCE05N60 - N-Channel Super Junction Power MOSFET
NCE05N60D,NCE05N60, NCE05N60F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology
Rating:
1
★
(9 votes)
WAYON
WML26N65C2 - Super Junction Power MOSFET
WML26N65C2, WMK26N65C2 WMN26N65C2, WMM26N65C2, WMJ26N65C2
650V 0.16Ω Super Junction Power MOSFET
Description
WMOSTM C2 is Wayon’s 2nd generation supe
Rating:
1
★
(9 votes)
Silan Microelectronics
SVS7N65FD2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR
Silan Microelectronics
SVS7N65D(F)(MJ)(FJ)D2_Datasheet
7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR
DESCRIPTION
SVS7N65D(F)(MJ)(FJ)D2 is an N-chann
Rating:
1
★
(9 votes)
MACOM
FR12-0002 - Single Junction Drop-In Isolator
Single Junction Drop-In Isolator 800MHz, 900MHz, 1800MHz, 1900MHz, 2100MHz
Features
• 20dB Isolation • 0.35dB Insertion Loss • Low cost package • Cus
Rating:
1
★
(9 votes)
Motorola Inc
2N4949 - PN UNIJUNCTION TRANSISTORS
Rating:
1
★
(8 votes)
General Semiconductor
1N5550 - GLASS PASSIVATED JUNCTION RECTIFIER
1N5550 THRU 1N5552
GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 200 to 1000 Volts
D *
Forward Current - 3.0 Amperes
FEATURES
P A T
E
N
T
Rating:
1
★
(8 votes)
Siemens Semiconductor Group
BF410C - LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR
Rating:
1
★
(8 votes)
FAGOR
1N4001GP - 1 Amp. Glass Passivated Junction Rectifier
1N4001GP 1N4007GP
1.0 Amp. Glass Passivated Junction Rectifier
DO-204AL (DO-41)
Voltage 50V to 1000 V
Current 1.0 A at 75º C
R
FEATURES
Rating:
1
★
(8 votes)
WAYON
WMN14N60C2 - Super Junction Power MOSFET
WML14N60C2, WMK14N60C2, WMM14N60C2 WMN14N60C2, WMP14N60C2, WMO14N60C2
600V 0.36Ω Super Junction Power MOSFET
Description
WMOSTM C2 is Wayon’s 2nd gen
Rating:
1
★
(8 votes)
Toshiba
k246 - Silicon N-Channel Junction Type Field Effect Transistor
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK246
For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplif
Rating:
1
★
(8 votes)
Crystalonics
2N4007 - (2N4006 - 2N4011) Silicon Epitaxial Junction PNP Switching Transistor
www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/
Rating:
1
★
(8 votes)
Central Semiconductor
2N4851 - (2N4851 - 2N4853) PN SILICON UNIJUNCTION TRANSISTOR
2N4851 2N4852 2N4853 PN SILICON UNIJUNCTION TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4851, 2N4852, a
Rating:
1
★
(8 votes)
LGE
30KP85SCA - Glass passivated junction chip
30KP33S,SC SERIES
30K Watts TVS Diodes
VR : 33 - 400 Volts PPK : 30,000 Watts
Features
Glass passivated junction chip Excellent Clamping Ca
Rating:
1
★
(8 votes)