junction Datasheet | Specifications & PDF Download

NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super

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Silan Microelectronics SVS7N65F/D/MJ_Datasheet 7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS7N65F/D/MJ is an N-channel enhan

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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GLASSPASSIVATED J UNCTIONPLASTICRECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere 1N4001G THRU 1N4007G FEATURES * High reliability * Low c

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NCE70T540I，NCE70T540K N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction tech

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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. BU103T Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Fluorescent Lamp、E

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NCE05N60D，NCE05N60, NCE05N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology

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WML26N65C2, WMK26N65C2 WMN26N65C2, WMM26N65C2, WMJ26N65C2 650V 0.16Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd generation supe

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Silan Microelectronics SVS7N65D(F)(MJ)(FJ)D2_Datasheet 7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-chann

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Single Junction Drop-In Isolator 800MHz, 900MHz, 1800MHz, 1900MHz, 2100MHz Features • 20dB Isolation • 0.35dB Insertion Loss • Low cost package • Cus

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1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts D * Forward Current - 3.0 Amperes FEATURES P A T E N T

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1N4001GP 1N4007GP 1.0 Amp. Glass Passivated Junction Rectifier DO-204AL (DO-41) Voltage 50V to 1000 V Current 1.0 A at 75º C R FEATURES

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WML14N60C2, WMK14N60C2, WMM14N60C2 WMN14N60C2, WMP14N60C2, WMO14N60C2 600V 0.36Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplif

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/

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2N4851 2N4852 2N4853 PN SILICON UNIJUNCTION TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4851, 2N4852, a

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30KP33S,SC SERIES 30K Watts TVS Diodes VR : 33 - 400 Volts PPK : 30,000 Watts Features — — — — — Glass passivated junction chip Excellent Clamping Ca

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