junction Datasheet | Specifications & PDF Download

NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super

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NCE70T540I，NCE70T540K N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction tech

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Silan Microelectronics SVS7N65F/D/MJ_Datasheet 7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS7N65F/D/MJ is an N-channel enhan

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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U05GU4B48 SILICON DIFFUSED JUNCTION TYPE RECTIFIER STACK Reverse Voltage - 400 Volts Forward Current - 0.5 Ampere Application: TELCOMMUNICATION APPLIC

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Excelics DATA SHEET • • • • • • +31.0dBm TYPICAL OUTPUT POWER 5.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSI

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Silan Microelectronics SVSP11N65D/F/S/FJD/K/TD2_Datasheet 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N65D/F/S/FJD/K/TD2 is an N

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1.5SMC-AU SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watt BREAK DOWN VOLTAGE 6.8 to 250 Volt FEATURES • P

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1.5SMC-AU SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watt BREAK DOWN VOLTAGE 6.8 to 250 Volt FEATURES • P

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NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super jun

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www.MICROSEMI.com GC1500A – GC1513 ® TM CONTROL DEVICES 30 Volt Abrupt Junction Tuning Varactors RoHS Compliant DESCRIPTION The GC1500 series va

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1.5SMC SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts BREAK DOWN VOLTAGE 6.8 to 250 Volts FEATURES • Pl

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

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Unijunction Transistor Description: A PN unijunction transistor in a TO–92 type package designed for use in pulse and timing circuits, sensing circ

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1.5SMC SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR PEAK PULSE POWER 1500 Watts BREAK DOWN VOLTAGE 6.8 to 250 Volts FEATURES • Pl

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GLASSPASSIVATED J UNCTIONPLASTICRECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere 1N4001G THRU 1N4007G FEATURES * High reliability * Low c

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w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com

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www.DataSheet4U.com

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/

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