J110 - JFET - General Purpose N-Channel

Datasheet Summary

Features

http://onsemi. com 1 DRAIN.
N.
Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low RDS(on) < 18 W Fast Switching td(on) + tr = 8.0 ns (Typ) Low Noise en = 6.0 nV/√Hz @ 10 Hz (Typ) Pb.
Free Packages are Available.
3 GATE 2 SOURCE.

ON Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	J110
Manufacturer	ON Semiconductor
File Size	78.73 KB
Description	JFET - General Purpose N-Channel
Datasheet	J110 Datasheet
Additional preview pages of the J110 datasheet.

📁 Similar Datasheet

J110 - N-channel silicon junction FETs (NXP)
J110 - N-Channel Switch (Fairchild Semiconductor)
J110 - N-Channel JFET (InterFET)
J110 - Switching (Micross)
J110 - n-channel JFET (Siliconix)
J110 - JFET GENERAL-PURPOSE TRANSISTOR (Motorola)
J110 - N-Channel JFETs (Vishay)
J110A - N-Channel JFET (InterFET Corporation)
J110A - n-channel JFET (Siliconix)
J111 - N-channel silicon field-effect transistors (NXP)

Other Datasheets by ON Semiconductor

J111 - N-Channel Switch
J112 - N-Channel Switch
J113 - N-Channel Switch

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com J110 JFET − General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for general purpose audio amplifiers, analog switches and choppers. Features http://onsemi.com 1 DRAIN • • • • • • • • N−Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low RDS(on) < 18 W Fast Switching td(on) + tr = 8.0 ns (Typ) Low Noise en = 6.0 nV/√Hz @ 10 Hz (Typ) Pb−Free Packages are Available* 3 GATE 2 SOURCE MARKING DIAGRAM MAXIMUM RATINGS Rating Gate−Source Voltage Drain −Gate Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temp Range Storage Temperature Range Symbol VGS VDG IG PD 310 2.

Published: Apr 7, 2007 |