100P03 Datasheet | Specifications & PDF Download

GOFORD 100P03 Features · VDSS RDS(ON) RDS(ON) ID @ -4.5V(Typ) @ -10V(Typ) -30V 3.1mΩ 2.2mΩ -100A · Super High Dense Cell Design · Reliable an

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UNISONIC TECHNOLOGIES CO., LTD UTT100P03 -100A, -30V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC’s ad

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OptiMOS®-P Trench Power-Transistor IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Product Summary V DS -30 V Features • P-channel - Logic Level -

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RRS100P03FRA 　　Pch -30V -10A Power MOSFET VDSS RDS(on)(Max.) ID PD -30V 12.6mΩ ±10A 2.0W lFeatures 1) Low on-resistance 2) Small Surface Mount Pack

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HC2100P03 Hybrid Coupler 3 dB, 90o Rev B4 Description The HC2100P03 is a low profile, high performance 3dB hybrid coupler in a new easy to use, manuf

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OptiMOS®-P Trench Power-Transistor IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Product Summary V DS -30 V Features • P-channel - Logic Level -

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www.DataSheet4U.com 4V Drive Pch MOSFET RRH100P03 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) SOP8 Features 1) Low on-resistance. 2

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OptiMOS®-P Trench Power-Transistor IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Product Summary V DS -30 V Features • P-channel - Logic Level -

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