107P Datasheet | Specifications & PDF Download

TD62107P/BP/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62107P,TD62107BP,TD62107F 4CH HIGH−CURRENT DARLINGTON SINK DRIVER The T

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HA16107P/FP, HA16108P/FP PWM Switching Regulator for High-performance Voltage Mode Control Description The IC products in this series are primary con

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www.DataSheet4U.com AMERICAN MICROSEMICONDUCTOR INC. P. 0. Box 104 Madison, New Jersey 07940 U. S. A. http://www.americanmicrosemi.com email:sales@am

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Philips 107P Electronic User's Manual www.DataSheet4U.com file:///C|/rita wu/gs3LF/ENGLISH/107P/Index.htm [10/12/2000 1:36:21 AM] Safety & Troubles

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TABLE OF CONTENTS Description of Terminology…………………………………………………………………………………2 Structural Drawing …………………………………………………………………………………………2 Reliability Test

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WILLAS FAST RECOVERY RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FR101 THRU FR107 FEATURES * Fast switching * Low leakage * Low forw

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www.DataSheet4U.com 2.1x0.7 mm RIGHT ANGLE SMD CHIP LED LAMP ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES A

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION FR101 THRU FR107 FAST RECOVERY RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES *

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LESHAN RADIO COMPANY, LTD. FR101 thru FR107 1.Feature & Dimensions * Plastic package has Underwriters Laboratory Fast Switching Rectifiers Flammab

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www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=28Ω BS107PT D G S E-Line TO9

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SM6107PSU ® P-Channel Enhancement Mode MOSFET Features Pin Description • -60V/-26A, RDS(ON)= 40mΩ(max.) @ VGS=-10V R= DS(ON) 54mΩ(max.) @ V =

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HUF76107P3 Data Sheet October 1999 File Number 4382.5 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFET

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1107ПВ1, 1132ПВ1 6 разрядный АЦП 1107ПВ1, 1132ПВ1 Зарубежный прототип TDC1014 6 РАЗРЯДНЫЙ АЦП Вента ОБЩЕЕ ОПИСАНИЕ_________________________________

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TABLE OF CONTENTS Description of Terminology…………………………………………………………………………………2 Structural Drawing …………………………………………………………………………………………2 Reliability Test

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BS107P 200V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET Features  BVDSS > 200V  RDS(ON) ≤ 23Ω @ VGS= 2.6V  ID = 120mA Maximum Continuous Drain Cur

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IRFH7107PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 75 8.5 48 0.6 75 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) =

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262(DPAK) packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high fr

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SM6107PSK Features · -60V/-4.7A , RDS(ON)=40mW(max.) @ VGS=-10V RDS(ON)=52mW(max.) @ VGS=-4.5V · 100% UIS + Rg Tested · Reliable and Rugged · Lead Fre

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