107P Datasheet | Specifications & PDF Download

HA16107P/FP, HA16108P/FP PWM Switching Regulator for High-performance Voltage Mode Control Description The IC products in this series are primary con

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION FR101 THRU FR107 FAST RECOVERY RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES *

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NVATS5A107PLZ Power MOSFET 40 V, 17 mΩ, 55 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high therm

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TD62107P/BP/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62107P,TD62107BP,TD62107F 4CH HIGH−CURRENT DARLINGTON SINK DRIVER The T

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high fr

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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=23Ω BS107P D G S REFER TO BS107PT FOR GRAPHS E-L

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NTLTS3107P Power MOSFET Features −20 V, −8.3 A, Single P−Channel, Micro8 Leadless Package • • • • • Low RDS(on) for Extended Battery Life Surface Mou

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High

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TABLE OF CONTENTS www.DataSheet4U.com Description of Terminology…………………………………………………………………………………2 Structural Drawing ………………………………………………………………………………………

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High

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TABLE OF CONTENTS Description of Terminology…………………………………………………………………………………2 Structural Drawing …………………………………………………………………………………………2 Reliability Test

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Philips 107P Electronic User's Manual www.DataSheet4U.com file:///C|/rita wu/gs3LF/ENGLISH/107P/Index.htm [10/12/2000 1:36:21 AM] Safety & Troubles

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www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=28Ω BS107PT D G S E-Line TO9

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TABLE OF CONTENTS Description of Terminology…………………………………………………………………………………2 Structural Drawing …………………………………………………………………………………………2 Reliability Test

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IRFH7107PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 75 8.5 48 0.6 75 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) =

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262(DPAK) packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high fr

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www.DataSheet4U.com AMERICAN MICROSEMICONDUCTOR INC. P. 0. Box 104 Madison, New Jersey 07940 U. S. A. http://www.americanmicrosemi.com email:sales@am

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HUF76107P3 Data Sheet October 1999 File Number 4382.5 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFET

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LESHAN RADIO COMPANY, LTD. FR101 thru FR107 1.Feature & Dimensions * Plastic package has Underwriters Laboratory Fast Switching Rectifiers Flammab

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BS107P 200V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET Features  BVDSS > 200V  RDS(ON) ≤ 23Ω @ VGS= 2.6V  ID = 120mA Maximum Continuous Drain Cur

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