HUF76107P3 Datasheet - Intersil Corporation

HUF76107P3 N-Channel MOSFET

HUF76107P3 Data Sheet October 1999 File Number 4382.5 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was design.

HUF76107P3 Features

* Logic Level Gate Drive

* 20A, 30V

* Ultra Low On-Resistance, rDS(ON) = 0.052Ω

* Temperature Compensating PSPICE® Model

* Temperature Compensating SABER© Model

* Thermal Impedance SPICE Model

* Thermal Impedance SABER Model

* Peak Curr

HUF76107P3_IntersilCorporation.pdf

HUF76107P3 Datasheet Preview — Preview of HUF76107P3 PDF

Datasheet Details

Part number:

HUF76107P3

Manufacturer:

Intersil Corporation

File Size:

369.65 KB

Description:

N-channel mosfet.

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HUF76107P3 HUF76107P3 N-Channel MOSFET Intersil Corporation

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