HUF76113DK8 - N-Channel MOSFET
HUF76113DK8 Data Sheet January 2003 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is ® manufactured using the innovative UltraFET process.
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
It was designed for use in app
HUF76113DK8 Features
* Logic Level Gate Drive
* 6A, 30V
* Ultra Low On-Resistance, rDS(ON) = 0.032Ω
* Temperature Compensating PSPICE® Model
* Temperature Compensating SABER™ Model
* Thermal Impedance SPICE Model
* Thermal Impedance SABER Model
* Peak Curre
