HUF76107D3 - N-Channel MOSFET
HUF76107D3, HUF76107D3S Data Sheet January 2003 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process.
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
It was designed for
HUF76107D3 Features
* Logic Level Gate Drive
* 20A, 30V
* Ultra Low On-Resistance, rDS(ON) = 0.052Ω
* Temperature Compensating PSPICE® Model
* Temperature Compensating SABER© Model
* Thermal Impedance SPICE Model
* Thermal Impedance SABER Model
* Peak Curr
