HUF76113T3ST Datasheet (Intersil Corporation)

HUF76113T3ST, N-Channel MOSFET

HUF76113T3ST TM Data Sheet June 2000 File Number 4388.3 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is ® manufactured using the innovative UltraFET process.

This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.

This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.

It was de

HUF76113T3ST Features

* Logic Level Gate Drive

* 4.7A, 30V

* Ultra Low On-Resistance, rDS(ON) = 0.031Ω

* Temperature Compensating PSPICE® Model

* Temperature Compensating SABER™ Model

* Thermal Impedance SPICE Model

* Thermal Impedance SABER Model

* Peak Cur