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25P10VP - M25P10
M25P10 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface PRELIMINARY DATA s 1 Mbit PAGED Flash Memory s 128 BYTE PAGE PROGRA.TNR10V471K - Metal Oxide Varistor
V Series Ⅲ Metal Oxide Varistor Ⅲ General Purpose Ⅲ Small Size Ⅲ UL 1414 and 1449 Approved Ⅲ 85؇C Maximum Temperature Actual Size The V series i.S10VB20 - Bridge Diode
SHINDENGEN Bridge Diode Square In-line Package S10VB20 200V 10A OUTLINE DIMENSIONS Case : S10VB Unit : mm RATINGS ● Absolute Maximum Ratings Item S.TNR10V271K - Metal Oxide Varistor
V Series Ⅲ Metal Oxide Varistor Ⅲ General Purpose Ⅲ Small Size Ⅲ UL 1414 and 1449 Approved Ⅲ 85؇C Maximum Temperature Actual Size The V series i.SR510VF - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER
SR510VF ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER VOLTAGE 100 Volt CURRENT 5 Ampere FEATURES • Ideal for automated placement • Ultra low forward voltage.BZD27C22PH - 10V - 220V Zener Diode
BZD27C10PH – BZD27C220PH Taiwan Semiconductor 1W, 10V - 220V Zener Diode FEATURES ● AEC-Q101 qualified ● Silicon zener diodes ● Low profile surface-.AFN2324BA - 110V N-Channel Enhancement Mode MOSFET
Alfa-MOS Technology General Description AFN2324BA, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.L4950 - (L4945 - L4951) 5V/8.5V/10V VERY LOW DROP VOLTAGE REGULATORS
L4945/L4950 L4951 5V/8.5V/10V VERY LOW DROP VOLTAGE REGULATORS PRECISE OUTPUT VOLTAGE: 5V ± 4% (L4945) 8.5V ± 4% (L4950) 10V ± 4% (L4951) OVER FULL TE.R5007ANJ - 10V Drive Nch MOSFET
10V Drive Nch MOSFET R5007ANJ zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) LPTS 10.1 4.5 1.3 zFeatures 1) Low on-resistance. 2) Fast s.TNR10V431K - Metal Oxide Varistor
V Series Ⅲ Metal Oxide Varistor Ⅲ General Purpose Ⅲ Small Size Ⅲ UL 1414 and 1449 Approved Ⅲ 85؇C Maximum Temperature Actual Size The V series i.LD8116C - Flexible Dimming Solution by PWM / 0-10V / Potentiometer
LD8116C 05/05/2018 Flexible Dimming Solution by PWM / 0-10V / Potentiometer REV. 00 General Description The LD8116C contains a processor which can co.BZD27C24PH - 10V - 220V Zener Diode
BZD27C10PH – BZD27C220PH Taiwan Semiconductor 1W, 10V - 220V Zener Diode FEATURES ● AEC-Q101 qualified ● Silicon zener diodes ● Low profile surface-.BZD27C15PH - 10V - 220V Zener Diode
BZD27C10PH – BZD27C220PH Taiwan Semiconductor 1W, 10V - 220V Zener Diode FEATURES ● AEC-Q101 qualified ● Silicon zener diodes ● Low profile surface-.EMBB0N10V - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 220mΩ ID 3A G UIS 100.M5M51008BFP-10VL - 1M-Bit CMOS Static RAM
1997-1/21 MITSUBISHI LSIs M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL, -70VLL,-10VLL,-12VLL,-15VLL 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RA.XCR3032XL-10VQ44C - XCR3032XL 32 Macrocell CPLD
0 R XCR3032XL 32 Macrocell CPLD 0 14 DS023 (v1.5) January 8, 2002 Preliminary Product Specification Features • • • • • Lowest power 32 macrocell .ISO-1001 - 0-+/-10VDC or 0-5V AC Signal Converter
YUAN www.DataSheet4U.com ISO-1001 Isolation Amplifier ISO-1001 Signal Isolated Amplifier IC Characteristics: ●Power supply Signal: input/output 300.JQX62F-1C-DC110V - POWER RELAY
JQX62F-1C POWER RELAY JQX-62F - 1C - DC12V Relay Type: Contact Form:- 1C Coil Voltage:- 6 ~ 110 VDC 6 ~ 240 VAC Contact Form Contact Rating Contact.YH396-10V - Connector
Material I/NO DESCRIPTION 1 HOUSING MATERIAL NYLON 66, UL94V-Grade Available Pin PARTS NO. YH396-02V YH396-03V YH396-04V YH396-05V YH396-06V YH396-0.