112 Datasheet | Specifications & PDF Download

LTK5112 28W 、F、  LTK5112  LTK5112 LTK5112 4Ω-28W 、，F ，LTK5112 6-14.5V, ， ， LTK5112 F  6V-14.5V  D /AB 、 EMI  FM ，、  、AB 、D ， I

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SHENZHEN DONGKE SEMICONDUCTOR CO., LTD -DK112 HIGH PERFORMANCE SWITCH MODE POWER CONTROLLER SPECIFICATION 1. DESCRIPTION The DK112 is specially design

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

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www.irantk.ir XY6112 Cost-effective off-line switching power supply controller - Shanghai Vision Institute of Electronic Technology Co., Ltd. Page 1 o

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MUN5111 Series Bias Resistor Transistor PNP Silicon COLLECTOR 3 BASE 1 R1 R2 3 1 2 2 EMITTER SOT-323(SC-70) M aximum R atings ( TA=25 C unless oth

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Metal Oxide Varistor (MOV) Data Sheet Features ■ Wide operating voltage (V1mA) range from 18V to 1800V ■ Fast responding to transient over-voltage ■ L

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SANYOU RELAYS Relays for advanced technology Miniature Power Relay SRD-Series Contact Capacity Features ● High contact capability： 12A switching c

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Data sheet acquired from Harris Semiconductor SCHS141H March 1998 - Revised October 2003 CD54HC112, CD74HC112, CD54HCT112, CD74HCT112 Dual J-K Flip-F

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Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272 CD41__99A, CS41__99A CN41__99A, CC41__99A POW-R-BLOKTM Dual & Single Diode

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UZ4706 SERIES UZ4806 SERIES High-reliability discrete products and engineering services since 1977 5 WATT ZENER DIODES FEATURES  Available as “HR”

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Bulletin PD-21004 01/05 SCHOTTKY RECTIFIER New GenIII D-61 Package 112CNQ030APbF 112CNQ030ASMPbF 110 Amp Major Ratings and Characteristics Charact

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Microtech (Hong Kong) Limited Tel: 852 2799 4649 Fax: 852 2121 8310 Email: sales@microtech-hk.com SPECIFICATION Metal Oxide Varistors SVR® REV. DATE

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Clamping Couplings, Recessed Screws Climax Part Number BLACK OXIDE STEEL BLACK OXIDE STEEL WITH KEYWAY BORE SIZE (INCH) BORE SIZE (INCH) O.D. WIDTH CL

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CL1128 SEMICONDUCTOR 10W/ CL1128，。CL1128 SOT23-6，CL1128。CL1128 LEB。，CL1128， 。 ◆ 5%, 5%。 ◆ TL431。 ◆ ：1μA（） ◆ ：300μA（） ◆ 、 ◆ ◆ ◆ ◆ （LEB） ◆

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NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET FEATURES • HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5

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240pin Registered DDR2 SDRAM DIMMs based on 1Gb version C This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 1Gb version C DD

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MAAM-011206 Broadband Darlington Amplifier DC - 15 GHz Features  Gain: 13.5 dB @ 6 GHz  Output P1dB: 18 dBm @ 6 GHz  Noise figure: 4.5 dB @ 6 GHz

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ELECTRONIC GIANT EG3112 Datasheet Half-Bridge Driver Copyright © 2016 by EGmicro Corporation REV 1.0 micro corp. EG3112 datasheet Half-Bridge Dri

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