| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
California Eastern Laboratories (CEL) | NE5511279A-T1-A | RF MOSFET LDMOS 7.5V 79A | DigiKey | 0 | 0 |
$0
|
🛒 Buy Now |
Download Datasheet (797.72 KB)
NE5511279A
CEL
797.72 KB
7.5v operation silicon rf power ld-mos fet.
DISCONTINUED
SILICON POWER MOS FET
NE5511279A
7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-B.
The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the
tr.
📁 Related Datasheet
NE5511279A - 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
(NEC)
NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET
FEATURES
• HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5 .
NE5510179A - 3.5V OPERATION SILICON RF POWER MOSFET
(NEC)
PRELIMINARY DATA SHEET
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER: 29.5 dBm .
NE5510279A - 3.5V OPERATION SILICON RF POWER MOSFET
(NEC)
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 NE5510279A TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ = .
NE5512 - Dual high-performance operational amplifier
(Philips)
Philips Semiconductors Linear Products
Product specification
Dual high-performance operational amplifier
NE/SA/SE5512
DESCRIPTION
The 5512 series .
NE5512D - Dual high-performance operational amplifier
(Philips)
Philips Semiconductors Linear Products
Product specification
Dual high-performance operational amplifier
NE/SA/SE5512
DESCRIPTION
The 5512 series .
NE5512N - Dual high-performance operational amplifier
(Philips)
Philips Semiconductors Linear Products
Product specification
Dual high-performance operational amplifier
NE/SA/SE5512
DESCRIPTION
The 5512 series .
 |
|
|
| NE5511279A-T1A |
|
UHF BAND, SI, N-CHANNEL, RF POWER, MOSFET
|
| Quest Components |
| 1580 In Stock |
| Qty : 250 units |
|
Unit Price : $7.3
|
| 🛒 Buy Now |
