Datasheet Details
- Part number
- NE5511279A
- Manufacturer
- CEL
- File Size
- 797.72 KB
- Datasheet
- NE5511279A-CEL.pdf
- Description
- 7.5V OPERATION SILICON RF POWER LD-MOS FET
NE5511279A Description
DISCONTINUED SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS .
The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the
transmission power amplifier for 7.
NE5511279A Features
* High output power
* High power added efficiency
* High linear gain
* Surface mount package
* Single supply
: Pout = 40.0 dBm TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA) : Pout = 40.5 dBm TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset
NE5511279A Applications
* 460 MHz Radio Systems
* 900 MHz Radio Systems
ORDERING INFORMATION
Part Number NE5511279A-T1
NE5511279A-T1A
Package 79A
Marking W3
Supplying Form
* 12 mm wide embossed taping
* Gate pin face the perforation side of the tape
* Qty 1 kpcs/reel
* 1
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