NE5511279A Datasheet - CEL

NE5511279A, 7.5V OPERATION SILICON RF POWER LD-MOS FET

DISCONTINUED SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The

Features

* High output power
* High power added efficiency
* High linear gain
* Surface mount package
* Single supply : Pout = 40.0 dBm TYP.
(f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA) : Pout = 40.5 dBm TYP.
(f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset

Applications

* 460 MHz Radio Systems
* 900 MHz Radio Systems ORDERING INFORMATION Part Number NE5511279A-T1 NE5511279A-T1A Package 79A Marking W3 Supplying Form
* 12 mm wide embossed taping
* Gate pin face the perforation side of the tape
* Qty 1 kpcs/reel
* 1

NE5511279A-CEL.pdf