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NE55410GR

N-CHANNEL SILICON POWER LDMOS FET

NE55410GR Features

* Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package

* Over 25 dB gain available by connecting two FET’s in series : GL (Q1) = 13.5 dB TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : GL (Q2) = 11.0 dB TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz)

NE55410GR General Description

The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral.

NE55410GR Datasheet (387.50 KB)

Preview of NE55410GR PDF

Datasheet Details

Part number:

NE55410GR

Manufacturer:

CEL

File Size:

387.50 KB

Description:

N-channel silicon power ldmos fet.
www.DataSheet4U.com LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIE.

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NE55410GR N-CHANNEL SILICON POWER LDMOS FET CEL

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