NE55410GR Datasheet, Fet, CEL

NE55410GR Features

  • Fet
  • Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package
  • Over 25 dB gain available by connecting two FET’s in series : GL (Q1) = 13.5 dB TYP. (VDS = 28

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Part number:

NE55410GR

Manufacturer:

CEL

File Size:

387.50kb

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📄 Datasheet

Description:

N-channel silicon power ldmos fet. The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplif

Datasheet Preview: NE55410GR 📥 Download PDF (387.50kb)
Page 2 of NE55410GR Page 3 of NE55410GR

TAGS

NE55410GR
N-CHANNEL
SILICON
POWER
LDMOS
FET
CEL

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Stock and price

California Eastern Laboratories (CEL)
RF MOSFET LDMOS 28V 16HTSSOP
DigiKey
NE55410GR-T3-AZ
0 In Stock
0
Unit Price : $0
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