NE55410GR N-CHANNEL SILICON POWER LDMOS FET

CEL

NE55410GR Description

www.DataSheet4U.com LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIE.
The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.

NE55410GR Features

* Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package
* Over 25 dB gain available by connecting two FET’s in series : GL (Q1) = 13.5 dB TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : GL (Q2) = 11.0 dB TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz)

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Datasheet Details

Part number: NE55410GR
Manufacturer: CEL
File Size: 387.50 KB
Datasheet: NE55410GR_CEL.pdf
Description: N-CHANNEL SILICON POWER LDMOS FET

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N-CHANNEL SILICON POWER LDMOS FET CEL

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