112-CHANNEL Datasheet | Specifications & PDF Download

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http://www.ncepower.com Pb Free Product NCEP0112AS NCE N-Channel Super Trench Power MOSFET Description The NCEP0112AS uses Super Trench technology t

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MTCH112 Dual-Channel Proximity/Touch Controller Features: • Capacitive Proximity Detection System: - High Signal to Noise Ratio (SNR) - Adjustable se

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NIKO-SEM N-Channel Enhancement Mode P1120ETFB Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V

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www.DataSheet.co.kr 19-6148; Rev 0; 12/11 EVALUATION KIT AVAILABLE MAX11120–MAX11128 1Msps, Low-Power, Serial 12-/10-/8-Bit, 4-/8-/16-Channel ADCs G

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2112 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2112 is a N-channel MOS FET of a vertical type and

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www.DataSheet.co.kr 19-6148; Rev 0; 12/11 EVALUATION KIT AVAILABLE MAX11120–MAX11128 1Msps, Low-Power, Serial 12-/10-/8-Bit, 4-/8-/16-Channel ADCs G

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PHP112N06T; PHB112N06T N-channel enhancement mode field-effect transistor Rev. 01 — 07 March 2001 Product specification 1. Description N-channel enhanc

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www.DataSheet.co.kr 19-6148; Rev 0; 12/11 EVALUATION KIT AVAILABLE MAX11120–MAX11128 1Msps, Low-Power, Serial 12-/10-/8-Bit, 4-/8-/16-Channel ADCs G

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CAP1126 6 Channel Capacitive Touch Sensor with 2 LED Drivers PRODUCT FEATURES Datasheet General Description The CAP1126, which incorporates SMSC’s

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InterFET Product Folder Technical Support Order Now J111-2-3A J111/A, J112/A, J113/A N-Channel JFET Features • InterFET N0132S Geometry • Low No

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PHP112N06T; PHB112N06T N-channel enhancement mode field-effect transistor Rev. 01 — 07 March 2001 Product specification 1. Description N-channel enhanc

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-C'? n-channel JFETs &II C'4 designed for • • • -&II Analog Switches -- •• &II Choppers • Commutators H Performance Curves NC See Section 4 BENEFITS

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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch January 2015 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Sw

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P1120EDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 280mΩ @VGS = 10V ID 11A TO-252 ABSOLUTE MAXIMUM RATINGS (TA =

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EVALUATION KIT AVAILABLE MAX11129–MAX11132 3Msps, Low-Power, Serial 12-/10-Bit, 8-/16-Channel ADCs General Description Benefits and Features The M

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www.DataSheet.co.kr 19-6148; Rev 0; 12/11 EVALUATION KIT AVAILABLE MAX11120–MAX11128 1Msps, Low-Power, Serial 12-/10-/8-Bit, 4-/8-/16-Channel ADCs G

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P1120ETFB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200V 280mΩ @VGS = 10V 11A TO-220F ABSOLUTE MAXIMUM RATINGS (T

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www.DataSheet.co.kr 19-6148; Rev 0; 12/11 EVALUATION KIT AVAILABLE MAX11120–MAX11128 1Msps, Low-Power, Serial 12-/10-/8-Bit, 4-/8-/16-Channel ADCs G

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