LMN3112DF Datasheet - LFC semi

LMN3112DF 30V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has Applications * MB / VGA / Vcore * DC-DC Converters * Power Management Functions Pin Configuration LMN3112DF (TO-252-2L) Description Gate Source Drain LMN311.

LMN3112DF Features

* 30V, 40A, RDS(ON)=12mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and com

LMN3112DF-LFCsemi.pdf