Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
MB / VGA / Vcore
DC-DC Converters
Power Management Functions
Pin Configuration
LMN3112ZF (DFN3X3-8L)
Pin 1,2,3
4 5,6,7,8
Description Source Gate Drain
LMN3112ZF
Notice: The information in this document is subject to change without notice.1
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Ordering Information
Part Number LMN3112ZF
P/N LMN3
Features
- 30V, 12.6A, RDS(ON)=10mΩ@VGS=10V.
- Improved dv/dt capability.
- Fast switching.
- 100% EAS guaranteed.
- Green Device Available
been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.