1176 Datasheet | Specifications & PDF Download

Advanced Analog Technology, Inc. November 2012 AAT1176B Product information presented is for internal use within AAT Inc. only. Details are subject

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NXP Semiconductors Data Sheet: Technical Data i.MX RT1170 Crossover Processors Data Sheet for Consumer Products Document Number: IMXRT1170CEC Rev. 5,

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LT1176/LT1176-5 Step-Down Switching Regulator FEATURES s s s s s s s s 1.2A On-Board Switch 100kHz Switching Frequency Excellent Dynamic Behavior DIP

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SN65ALS1176 SLLS295B – APRIL 1998 – REVISED JANUARY 2023 SN65ALS1176 Differential Bus Transceiver 1 Features • Meets or exceeds the requirements of T

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Data Sheet FEATURES Allows safe board insertion and removal from a live backplane Controls supply voltages from 3.15 V to 16.5 V Precision current sen

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Red LED L11767 High output power red emitting diode The L11767 is a high output red LED that delivers light output more than twice that of our previ

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Preliminary Data Sheet PD60185-C IR1176 SYNCHRONOUS RECTIFIER DRIVER Features • Provides constant and proper gate drive to power Product Summary Vdd

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SN65ALS1176 SLLS295B – APRIL 1998 – REVISED JANUARY 2023 SN65ALS1176 Differential Bus Transceiver 1 Features • Meets or exceeds the requirements of T

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SN65ALS1176 SLLS295B – APRIL 1998 – REVISED JANUARY 2023 SN65ALS1176 Differential Bus Transceiver 1 Features • Meets or exceeds the requirements of T

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BOWEI INTEGRATED CIRCUITS CO.,LTD. DRVCO-11765 Microwave Dielectric Resonator Oscillator Electrical Specification (TA=25℃) Parameter Unit Min Typ

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Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 ■ Features • Low collector-emitter saturat

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APS11700 and APS11760 2 - Micropower Vertical and Planar Hall-Effect Switches FEATURES AND BENEFITS • Ultralow power consumption • ASIL A function

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CXG1176UR High Power DPDT Switch with Logic Control Description This IC can be used in wireless communication systems, for example, W-CDMA handsets. T

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18-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) CY7C

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CY7C1161KV18, CY7C1176KV18 CY7C1163KV18, CY7C1165KV18 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) Features ■ Configu

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community ISO1176 SLLS897E – MARCH 2008 – REVISED JUNE 2015 ISO1176 Is

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NXP Semiconductors Data Sheet: Technical Data Document Number: IMXRT1170AEC Rev. 5, 01/2024 i.MX RT1170 Crossover Processors Data Sheet for Automoti

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T1/E1/CEPT/ISDN-PRI INTERFACE MODULES Four Transformer Modules for Dual SMT T1/E1 Ports, Extended Temperature Range Optimized for enhanced EMC perfor

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880364 1176 MHz GPS L5 BAW Filter Applications   For GPS L5 Applications For high-ultimate rejection applications Product Features        Us

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