11N60S5 Datasheet | Specifications & PDF Download

SPW11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme

Rating: 1 ★ (4 votes)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60S5 ISPW11N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhanceme

Rating: 1 ★ (4 votes)

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

Rating: 1 ★ (3 votes)

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

Rating: 1 ★ (3 votes)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPI11N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancement mode ·Fast

Rating: 1 ★ (3 votes)

SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic av

Rating: 1 ★ (2 votes)

Isc N-Channel MOSFET Transistor SPB11N60S5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·

Rating: 1 ★ (2 votes)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPP11N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancement mode ·Fast

Rating: 1 ★ (2 votes)

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

Rating: 1 ★ (1 votes)