Cool MOS™ Power Transistor Feature • New revol.
Infineon Technologies AG
7
11N60S5 - SPP11N60S5
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.
Infineon Technologies
2
SPB11N60S5 - Cool MOS Power Transistor
SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic av.
Infineon Technologies
2
SPW11N60S5 - Cool MOS Power Transistor
SPW11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme.
INCHANGE
2
SPW11N60S5 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60S5 ISPW11N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhanceme.
INCHANGE
2
SPB11N60S5 - N-Channel MOSFET
Isc N-Channel MOSFET Transistor SPB11N60S5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·.
Infineon Technologies
1
SPI11N60S5 - Power Transistor
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.
Infineon Technologies
1
SPP11N60S5 - Power Transistor
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.
INCHANGE
1
SPP11N60S5 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPP11N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancement mode ·Fast.
INCHANGE
1
SPI11N60S5 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPI11N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancement mode ·Fast.